1 MRF3866R2 motorola rf device data the rf line ? tape and reel packaging available for MRF3866R2: r2 suffix = 2,500 units per reel maximum ratings rating symbol value unit collectoremitter voltage v ceo 30 vdc collectorbase voltage v cbo 55 vdc emitterbase voltage v ebo 3.5 vdc collector current e continuous i c 0.4 adc total device dissipation @ t a = 25 c derate above 25 c p d 625 5.0 mw mw/ c total device dissipation @ t c = 25 c derate above 25 c p d 1.5 12 watts mw/ c operating and storage junction temperature range t j , t stg 55 to +150 c maximum junction temperature t jmax 150 c thermal characteristics characteristic symbol max unit thermal resistance, junction to case r q jc 83.3 c/w thermal resistance, junction to ambient r q ja 125 c/w electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collectoremitter breakdown voltage (i c = 5.0 madc, r be = 10 w ) v (br)cer 55 e vdc collectoremitter sustaining voltage (i c = 5.0 madc, i b = 0) v ceo(sus) 30 e vdc emitterbase breakdown voltage (i e = 100 m adc, i c = 0) v (br)ebo 3.5 e vdc collector cutoff current (v ce = 28 vdc, i b = 0) i ceo e 0.02 madc collector cutoff current (v ce = 30 vdc, v be = 1.5 vdc (rev.), t c = 150 c) (v ce = 55 vdc, v be = 1.5 vdc (rev.) i cex e e 5.0 0.1 madc emitter cutoff current (v be = 3.5 vdc, i c = 0) i ebo e 0.1 madc (continued) order this document by mrf3866/d
semiconductor technical data i c = 400 ma highfrequency transistors npn silicon case 75105, style 1 (so8) ? motorola, inc. 1997 (replaces mps3866/d)
MRF3866R2 2 motorola rf device data electrical characteristics e continued (t a = 25 c unless otherwise noted) characteristic symbol min max unit on characteristics dc current gain (i c = 360 madc, v ce = 5.0 vdc) (1) (i c = 50 madc, v ce = 5.0 vdc) h fe 5.0 10 e 200 e collectoremitter saturation voltage (i c = 100 madc, i b = 20 madc) v ce(sat) e 1.0 vdc smallsignal characteristics currentgain e bandwidth product (i c = 50 madc, v ce = 15 vdc, f = 200 mhz) f t 500 e mhz output capacitance (v cb = 28 vdc, i e = 0, f = 1.0 mhz) c obo e 3.0 pf functional test amplifier power gain (v cc = 28 vdc, p out = 1.0 w, f = 400 mhz) g pe 10 e db collector efficiency (v cc = 28 vdc, p out = 1.0 w, f = 400 mhz) h 45 e % note: 1. pulse test: pulse width 300 m s, duty cycle 2.0%. v ce i c f s 11 s 21 s 12 s 22 v ce (volts) i c (ma) f (mhz) s 11 f s 21 f s 12 f s 22 f 15 50 100 200 300 400 500 600 700 800 900 1000 0.67 0.69 0.70 0.71 0.72 0.72 0.72 0.72 0.71 0.70 166 176 177 172 168 164 160 155 151 146 13.75 6.93 4.57 3.38 2.66 2.17 1.85 1.61 1.40 1.25 92 81 73 67 61 54 49 44 39 34 0.016 0.024 0.032 0.042 0.049 0.056 0.061 0.068 0.075 0.084 44 53 57 59 59 61 63 65 64 68 0.32 0.30 0.32 0.34 0.37 0.40 0.43 0.47 0.50 0.53 27 24 31 37 45 53 60 66 73 79 table 1. MRF3866R2 common emitter sparameters
3 MRF3866R2 motorola rf device data package dimensions case 75105 issue s seating plane 1 4 5 8 a 0.25 m cb ss 0.25 m b m h c x 45 l dim min max millimeters a 1.35 1.75 a1 0.10 0.25 b 0.35 0.49 c 0.18 0.25 d 4.80 5.00 e 1.27 bsc e 3.80 4.00 h 5.80 6.20 h 0 7 l 0.40 1.25 0.25 0.50 notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. dimensions are in millimeters. 3. dimension d and e do not include mold protrusion. 4. maximum mold protrusion 0.15 per side. 5. dimension b does not include mold protrusion. allowable dambar protrusion shall be 0.127 total in excess of the b dimension at maximum material condition. d e h a b e b a1 c a 0.10 style 1: pin 1. emitter 2. collector 3. collector 4. emitter 5. emitter 6. base 7. base 8. emitter
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